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It provides absolute maximum ratings, thermal characteristics, detailed electrical parameters for IGBT and FRD, and typical characteristic curves for output, switching, capacitance, and turn-on 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applications does SGT20N60FD1PN/P7/F/S target?","Question",{"text":62,"@type":63},"It is intended for induction heating, UPS, SMPS, and PFC applications.","Answer",{"name":65,"@type":60,"acceptedAnswer":66},"What are the main electrical performance highlights listed in the features section?",{"text":67,"@type":63},"The datasheet highlights low conduction loss, fast switching, high input impedance, and provides a typical VCE(sat) of 2.0V at IC=20A.",{"name":69,"@type":60,"acceptedAnswer":70},"Which limits and test conditions are covered in the absolute maximum and electrical characteristics sections?",{"text":71,"@type":63},"It includes absolute maximum limits such as collector-emitter voltage, gate-emitter voltage, collector current at TC=25°C and TC=100°C, power dissipation with derating, and specified temperature ranges, plus detailed IGBT electrical parameters at defined measurement 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using Field Stop IGBT technology, offers the optimum performance for induction Heating, UPS, SMPS and PFC application.  \nFEATURES  \n􀂊 20A, 600V, VCE(sat)(typ. )=2.0V@IC=20A  \n􀂊 Low conduction loss  \n􀂊 Fast switching  \n􀂊 High input impedance  \nG  \nC  \nE  \nTO-220F-3L  \nTO-263-2L  \nTO-3P  \nTO-247-3L  \nNOMENCLATURE  \nSGT 20 N 60 □ □ □ □  \nIGBT series  \nCurrent: 60 denotes 60A  \nN : N Channel  \nNE: N-channel planar gate with ESD  \nT: N-channel trench gate  \nVoltage: 60 denotes 600V  \nPackage, PN denotes TO-3P; P7 denotes TO-247-3L, F denotes TO-220F; S denotes TO-263  \n1 ,2 ,3… : Version No.  \nD : Package with fast recovery diode R : integrated with freewheeling diode  \nL : Low saturation voltage  \nS : Standard Q : Quick  \nF : High speed  \nUF : Ultra high speed  \nORDERING INFORMATION  \n\n| Part No. | Package | Marking | Hazardous Substance Control | Packing |\n| --- | --- | --- | --- | --- |\n| SGT20N60FD1PN | TO-3P | 20N60FD1 | Pb free | Tube |\n| SGT20N60FD1P7 | TO-247-3L | 20N60FD | Pb free | Tube |\n| SGT20N60FD1F | TO-220F-3L | 20N60FD1F | Pb free | Tube |\n| SGT20N60FD1S | TO-263-2L | 20N60FD1S | Pb free | Tube |\n\nABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)  \n\n| Parameter |  | Symbol | Ratings |  |  |  | Units |\n| --- | --- | --- | --- | --- | --- | --- | --- |\n|  |  |  | SGT20N60 FD1PN | SGT20N60 FD1P7 | SGT20N60 FD1F | SGT20N60 FD1S |  |\n| Collector to Emitter Voltage |  | VCE | 600 |  |  |  | V |\n| Gate to Emitter Voltage |  | VGE | ±20 |  |  |  | V |\n| Collector Current | TC=25􀁱 C | IC | 40 |  |  |  | A |\n|  | TC=100􀁱 C |  | 20 |  |  |  |  |\n| Pulsed Collector Current |  | ICM | 60 |  |  |  | A |\n| Power Dissipation(TC=25􀁱 C)\u003Cbr>-Derate above 25􀁱 C |  | PD | 155 | 167 | 38 | 195 | W |\n|  |  |  | 1.24 | 1.33 | 0.25 | 1.56 | W/􀁱 C |\n| Operating Junction Temperature Range |  | TJ | -55～+150 |  |  |  | 􀁱 C |\n| Storage Temperature Range |  | Tstg | -55～+150 |  |  |  | 􀁱 C |\n\nTHERMAL CHARACTERISTICS  \n\n| Parameter | Symbol |  | Ratings |  |  |  |  |  |  |  | Units |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- |\n|  |  |  | SGT20N60 FD1PN |  | SGT20N60 FD1P7 | SGT20N60 FD1F |  |  | SGT20N60 FD1S |  |  |\n| Thermal Resistance, Junction to Case (IGBT) | RθJC |  | 0.79 |  | 0.75 | 3.95 |  |  | 0.64 |  | 􀁱 C/W |\n| Thermal Resistance, Junction to Case (FRD) | RθJC |  | 2.7 |  | 2.24 | 5.2 |  |  | 3.07 |  | 􀁱 C/W |\n| Thermal Resistance, Junction to\u003Cbr>Ambient | RθJA |  | 40 |  | 40 | 62.5 |  |  | 30 |  | 􀁱 C/W |\n| \u003Cbr>ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted) |  |  |  |  |  |  |  |  |  |  |  |\n| Parameter |  | Symbol |  | Test conditions |  |  | Min. | Typ. |  | Max. | Units |\n| Collector to Emitter Breakdown Voltage |  | BVCE |  | VGE=0V, IC=100μA |  |  | 600 | -- |  | -- | V |\n| C-E Leakage Current |  | ICES |  | VCE=600V,VGE=0V |  |  | -- | -- |  | 200 | μA |\n| G-E Leakage Current |  | IGES |  | VGE=20V,VCE=0V |  |  | -- | -- |  | ±400 | nA |\n| G-E Threshold Voltage |  | VGE(th) |  | IC=250μA,VCE=VGE |  |  | 4.0 | 5.0 |  | 6.5 | V |\n| Collector to Emitter Saturation Voltage |  | VCE(sat) |  | IC=20A,VGE=15V |  |  | -- | 2.0 |  | 2.7 | V |\n|  |  |  |  | IC=20A, VGE=15V,TC=125􀁱 C |  |  | -- | 2.3 |  | -- | V |\n| Input Capacitance |  | Cies |  | VCE=30V\u003Cbr>VGE=0V\u003Cbr>f=1MHz |  |  | -- | 916 |  | -- | pF |\n| Output Capacitance |  | Coes |  |  |  |  | -- | 108 |  | -- |  |\n| Reverse Transfer Capacitance |  | Cres |  |  |  |  | -- | 26 |  | -- |  |\n| Turn-On Delay Time |  | Td(on) |  | VCE=400V |  |  | -- | 15 |  | -- | ns |\n\n\n| Rise Time | Tr |  | IC=20ARg=10Ω VGE=15V |  | -- | 45 | -- |  |\n| --- | --- | --- | --- | --- | --- | --- | --- | --- |\n| Turn-Off Delay Time | Td(off) |  |  |  | -- | 67 | -- |  |\n| Fall Time | Tf |  |  |  | -- | 129 | -- |  |\n| Turn-On Switching Loss | Eon |  | Inductive Load |  | -- | 0.898 | -- | mJ |\n| Turn-Off Switching Loss | Eoff |  |  |  | -- | 0.336 | -- |  |\n| Total Switching Lo","cbCaiaRF7kKghzhw","https://ap.wps.com/l/cbCaiaRF7kKghzhw","pdf",289879,"English","# Overview\n## Description and Applications\n## Features\n# Device Identification\n## Nomenclature\n# Ordering Information\n# Maximum Ratings\n## Absolute Maximum Ratings\n# Thermal Characteristics\n# Electrical Characteristics\n## IGBT Parameters\n## FRD Parameters\n# Typical Characteristic Curves","[{\"question\":\"What applications does SGT20N60FD1PN/P7/F/S target?\",\"answer\":\"It is intended for induction heating, UPS, SMPS, and PFC applications.\"},{\"question\":\"What are the main electrical performance highlights listed in the features section?\",\"answer\":\"The datasheet highlights low conduction loss, fast switching, high input impedance, and provides a typical VCE(sat) of 2.0V at IC=20A.\"},{\"question\":\"Which limits and test conditions are covered in the absolute maximum and electrical characteristics sections?\",\"answer\":\"It includes absolute maximum limits such as collector-emitter voltage, gate-emitter voltage, collector current at TC=25°C and TC=100°C, power dissipation with derating, and specified temperature ranges, plus detailed IGBT electrical parameters at defined measurement conditions.\"}]","20A, 600V Field Stop IGBT - Description, Features & Electrical Characteristics | PDF",1791803419,23]